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NTD2955, NVD2955
1200
1000
C iss
V DS = 0 V
V GS = 0 V
T J = 25 ° C
15
12.5
V DS
I D = 12 A
T J = 25 ° C
60
50
800
C rss
10
Q T
40
V GS
600
C iss
7.5
Q GS
Q GD
30
400
5
20
200
C oss
2.5
10
C rss
0
10
5
0
5
10
15
20
25
0
0
2
4
6
8
10
12
14
0
16
-V GS
-V DS
Q T , TOTAL GATE CHARGE (nC)
GATE ? TO ? SOURCE OR DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate ? To ? Source and Drain ? To ? Source
Voltage versus Total Charge
1000
100
V DD = ? 30 V
I D = ? 12 A
V GS = ? 10 V
T J = 25 ° C
15
10
V GS = 0 V
T J = 25 ° C
t f
t r
t d(off)
10
t d(on)
5
1
1
10
100
0
0
0.25
0.5
0.75
1
1.25
1.5
1.75
100
10
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
V GS = ? 15 V
SINGLE PULSE
T C = 25 ° C
? V SD , SOURCE ? TO ? DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus Current
100 m s
1 ms
I S
di/dt
1
10 ms
dc
t a
t rr
t b
R DS(on) LIMIT
THERMAL LIMIT
TIME
0.1
0.1
1
PACKAGE LIMIT
10
100
t p
I S
0.25 I S
? V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Figure 12. Diode Reverse Recovery Waveform
Safe Operating Area
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